savantic semiconductor product specification silicon npn power transistors 2SD1163,2SD1163a d escription wit h to-220 package low collector saturation voltage applications tv horizontal deflection output, pinning absolute maximum ratings (ta=25 ) symbol parameter conditions value unit 2SD1163 300 v cbo collector- base voltage 2SD1163a open emitter 350 v 2SD1163 120 v ceo collector- emitter voltage 2SD1163a open base 150 v v ebo emitter-base voltage open collector 6 v i c collector current 7 a i cm collector current-peak 10 a i c(surge) collector current-surge 20 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 pin description 1 base 2 collector;connected to mounting base 3 emitter
savantic semiconductor product specification 2 silicon npn power transistors 2SD1163,2SD1163a c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ max unit 2SD1163 120 v (br)ceo collector-emitter breakdown voltage 2SD1163a i c =10ma ;r be = : 150 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 6 v 2SD1163 2.0 v cesat collector-emitter saturation voltage 2SD1163a i c =5a, i b =0.5a 1.0 v v besat base-emitter saturation voltage i c =5a, i b =0.5a 1.2 v 2SD1163 v cb =300v;i e =0 5 ma i cbo collector cut-offcurrent 2SD1163a v cb =350v;i e =0 5 ma h fe dc current gain i c =5a ; v ce =5v 25 switching times t f fall time i cm =3.5a;i b1 =0.45a 0.5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1163,2SD1163a package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
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